W968D6DA Datasheet, PDF (63/75 Pages) Winbond – Low-power features

W968D6DA
256Mb Async./Page,Syn./Burst CellularRAM
10.2.22 Burst WRITE Followed by Burst READ
CLK
V IH
V IL
A [ max : 0 ]
V IH
V IL
ADV #
V IH
V IL
LB # / UB #
V IH
V IL
CE #
V IH
V IL
tSP tHD
Valid
Address
tSP tHD
tCSP
OE #
V IH
V IL
tSP tHD
WE # ^{V IH}
V IL
WAIT
V OH
V OL
High - Z
DQ [ 15:0 ] V IH _{High - Z}
IN / OUT ^{V IL}
tSP tHD
tSP ^tHD
VaVlaidlid
Address
tSP tHD
tKADV*3
tCBPH
tHD
*2
tCSP
tOHZ
tSP _tHD tBOE
High - Z
tSP tHD
D0
D1
D2
D3
V
V
OH
OL
tACLK
High - Z
tKOH
Valid Valid Valid Valid
Output Output Output Output
Don‟t Care
Undefined
Note : 1. Non-default BCR settings for burst WRITE followed by burst READ: Fixed or variable latency; latency code 2(3clocks);
WAIT active LOW; WAIT asserted during delay.
2. A refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by either of the following two
conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns. CE# can stay LOW between burst READ and
burst WRITE operations, but CE# must not remain LOW longer than tCEM. See burst interrupt diagrams for cases
where CE# stays LOW between bursts.
3. Only fixed latency requires tKADV.
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Publication Release Date : June 27, 2013
Revision : A01-003