W25N01GVZEIT-TR Datasheet, PDF (60/68 Pages) Winbond – 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ

W25N01GVxxIG/IT
AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL
ALT
MIN
SPEC
TYP
MAX
UNIT
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX⁽²⁾
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ⁽²⁾
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL
20
ns
Write Protect Hold Time After /CS High
tSHWL
100
ns
Status Register Write Time
tW
50
ns
/CS High to next Instruction after Reset during
Page Data Read / Program Execute / Block Erase
tRST⁽²⁾
5/10/500 µs
Read Page Data Time (ECC disabled)
tRD1
25
µs
Read Page Data Time (ECC enabled)
tRD2
60
µs
Page Program, OTP Lock, BBM Management Time
tPP
250
700
us
Block Erase Time
tBE
2
10
ms
Number of partial page programs
NoP
4
Notes:
1.
2.
3.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.
times
- 59 -