W25N01GVZEIT-TR Datasheet, PDF (55/68 Pages) Winbond – 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ

W25N01GVxxIG/IT
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings ⁽¹⁾
PARAMETERS
Supply Voltage
SYMBOL
VCC
Voltage Applied to Any Pin
VIO
Transient Voltage on any Pin
VIOT
Short Circuit Output Crrent, IOs
Storage Temperature
Lead Temperature
Electrostatic Discharge Voltage
TSTG
TLEAD
VESD
CONDITIONS
Relative to Ground
<20nS Transient
Relative to Ground
Human Body Model⁽³⁾
RANGE
–0.6 to +4.6
–0.6 to +4.6
–2.0V to VCC+2.0V
5
–65 to +150
See Note ⁽²⁾
–2000 to +2000
UNIT
V
V
V
mA
°C
°C
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the
European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Standard JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
9.2 Operating Ranges
PARAMETER
SYMBOL
Supply Voltage
Ambient Temperature,
Operating
VCC
TA
CONDITIONS
Industrial
SPEC
MIN MAX
2.7
3.6
–40 +85
UNIT
V
°C
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Publication Release Date: March 21, 2016
Revision G