W25N01GVZEIT-TR Datasheet, PDF (57/68 Pages) Winbond – 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ

W25N01GVxxIG/IT
9.4 DC Electrical Characteristics
PARAMETER
SYMBOL CONDITIONS
SPEC
MIN
TYP
MAX
Input Capacitance
CIN(1)
VIN = 0V⁽¹⁾
6
Output Capacitance
Cout⁽¹⁾
VOUT = 0V⁽¹⁾
8
Input Leakage
ILI
±2
I/O Leakage
ILO
±2
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
10
50
Read Current
ICC2
C = 0.1 VCC / 0.9 VCC
DO = Open
25
35
Current Page Program ICC3
/CS = VCC
25
35
Current Block Erase
ICC4
/CS = VCC
25
35
Input Low Voltage
VIL
VCC x 0.3
Input High Voltage
VIH
VCC x 0.7
Output Low Voltage
VOL
IOL = 2.1mA
0.4
Output High Voltage
VOH
IOH = –400 µA
2.4
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.
UNIT
pF
pF
µA
µA
µA
mA
mA
mA
V
V
V
V
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Publication Release Date: March 21, 2016
Revision G