W25N01GVZEIT-TR Datasheet, PDF (40/68 Pages) Winbond – 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ

W25N01GVxxIG/IT
8.2.15 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the Data Buffer after
executing the Read Page Data instruction. The Read Data instruction is initiated by driving the /CS pin low
and then shifting the instruction code “03h” followed by the 16-bit Column Address and 8-bit dummy clocks
or a 24-bit dummy clocks into the DI pin. After the address is received, the data byte of the addressed Data
Buffer location will be shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB)
first. The address is automatically incremented to the next higher address after each byte of data is shifted
out allowing for a continuous stream of data. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in Figure 19a & 19b. When BUF=1, the device is in the Buffer
Read Mode. The data output sequence will start from the Data Buffer location specified by the 16-bit Column
Address and continue to the end of the Data Buffer. Once the last byte of data is output, the output pin will
become Hi-Z state. When BUF=0, the device is in the Continuous Read Mode, the data output sequence
will start from the first byte of the Data Buffer and increment to the next higher address. When the end of
the Data Buffer is reached, the data of the first byte of next memory page will be following and continues
through the entire memory array. This allows using a single Read instruction to read out the entire memory
array and is also compatible to Winbond’s SpiFlash NOR flash memory command sequence.
Figure 19a. Read Data Instruction (Buffer Read Mode, BUF=1)
Figure 19b. Read Data Instruction (Continuous Read Mode, BUF=0)
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