CD00237391 Datasheet, PDF (92/177 Pages) STMicroelectronics – ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM

Electrical characteristics
STM32F20xxx
5.3.13
Table 37. Flash memory programming with V_PP (continued)
Symbol
Parameter
Conditions
Min⁽¹⁾ Typ Max⁽¹⁾ Unit
V_PP
V_PP voltage range
7
-
I_PP
Minimum current sunk on
the V_PP pin
10
-
t_VPP(3)
Cumulative time during
which V_PP is applied
-
-
1. Guaranteed by design, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
3. V_PP should only be connected during programming/erasing.
9
V
-
mA
1 hour
Table 38. Flash memory endurance and data retention
Symbol Parameter
Conditions
N_END
t_RET
Endurance
Data retention
T_A = –40 to +85 °C (6 suffix versions)
T_A = –40 to +105 °C (7 suffix versions)
1 kcycle⁽²⁾ at T_A = 85 °C
1 kcycle⁽²⁾ at T_A = 105 °C
10 kcycles⁽²⁾ at T_A = 55 °C
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
Value
Min⁽¹⁾
10
30
10
20
Unit
kcycles
Years
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
● FTB: A burst of fast transient voltage (positive and negative) is applied to V_DD and V_SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 39. They are based on the EMS levels and classes
defined in application note AN1709.
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