CD00237391 Datasheet, PDF (69/177 Pages) STMicroelectronics – ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM

STM32F20xxx
Electrical characteristics
5.3.6
Table 17. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min Typ Max Unit
V_BOR1
Brownout level 1
threshold
Falling edge
Rising edge
V_BOR2
Brownout level 2
threshold
Falling edge
Rising edge
V_BOR3
Brownout level 3
threshold
V_BORhyst(2) BOR hysteresis
T_{RSTTEMPO(2)(3)} Reset temporization
I_RUSH(2)
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
Falling edge
Rising edge
E_RUSH(2)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
V_DD = 1.8 V, T_A = 105 °C,
I_RUSH = 171 mA for 31 µs
2.13 2.19 2.24 V
2.23 2.29 2.33 V
2.44 2.50 2.56 V
2.53 2.59 2.63 V
2.75 2.83 2.88 V
2.85 2.92 2.97
- 100 - mV
0.5 1.5 3.0 ms
- 160 200 mA
-
- 5.4 µC
1. The product behavior is guaranteed by design down to the minimum V_POR/PDR value.
2. Guaranteed by design, not tested in production.
3. The reset temporization is measured from the power-on (POR reset or wakeup from V_BAT) to the instant
when first instruction is read by the user application code.
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 18: Current consumption
measurement scheme.
All Run mode current consumption measurements given in this section are performed using
CoreMark code.
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