CD00237391 Datasheet, PDF (91/177 Pages) STMicroelectronics – ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM

STM32F20xxx
Electrical characteristics
Table 36. Flash memory programming
Symbol
Parameter
Conditions
Min⁽¹⁾ Typ Max⁽¹⁾ Unit
t_prog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-
Program/erase parallelism
(PSIZE) = x 8
-
t_ERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
16 100⁽²⁾ µs
400 800
300 600 ms
Program/erase parallelism
(PSIZE) = x 32
-
250 500
Program/erase parallelism
(PSIZE) = x 8
-
1200 2400
t_ERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
700 1400 ms
Program/erase parallelism
(PSIZE) = x 32
-
550 1100
Program/erase parallelism
(PSIZE) = x 8
-
2
4
t_ERASE128KB
Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
Program/erase parallelism
(PSIZE) = x 32
-
Program/erase parallelism
(PSIZE) = x 8
-
t_ME
Mass erase time
Program/erase parallelism
(PSIZE) = x 16
-
Program/erase parallelism
(PSIZE) = x 32
-
1.3 2.6 s
1
2
16 32
11 22 s
8
16
V_prog Programming voltage
32-bit program operation 2.7
-
3.6 V
16-bit program operation 2.1
-
3.6 V
8-bit program operation
1.8
-
3.6 V
1. Based on characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
Table 37. Flash memory programming with V_PP
Symbol
Parameter
Conditions
t_prog
Double word programming
t_ERASE16KB Sector (16 KB) erase time
t_ERASE64KB Sector (64 KB) erase time
t_ERASE128KB Sector (128 KB) erase time
t_ME
Mass erase time
V_prog
Programming voltage
T_A = 0 to +40 °C
V_DD = 3.3 V
V_PP = 8.5 V
Min⁽¹⁾ Typ Max⁽¹⁾ Unit
-
16 100⁽²⁾ µs
-
230
-
-
490
-
ms
-
875
-
-
6.9
-
s
2.7
-
3.6 V
Doc ID 15818 Rev 9
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