English
Language : 

CD00253742 Datasheet, PDF (82/120 Pages) STMicroelectronics – XL-density performance line ARM-based 32-bit MCU
Electrical characteristics
STM32F103xF, STM32F103xG
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be appFlied directly on the device, over the range
of specification values. When unexpected behavior is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 45. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
8/48 MHz 8/72 MHz
Unit
0.1 to 30 MHz
8
SEMI
Peak level
VDD = 3.3 V, TA = 25 °C,
LQFP144 package
30 to 130 MHz
compliant with IEC
130 MHz to 1GHz
31
28
61967-2
SAE EMI Level
4
12
21 dBµV
33
4
-
5.3.12
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 46. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class Maximum value(1) Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C, conforming
to JESD22-A114
2
VESD(CDM)
Electrostatic discharge
TA = +25 °C, conforming
voltage (charge device model) to JESD22-C101
II
2000
V
500
1. Based on characterization results, not tested in production.
82/120
Doc ID 16554 Rev 3