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CD00253742 Datasheet, PDF (41/120 Pages) STMicroelectronics – XL-density performance line ARM-based 32-bit MCU
STM32F103xF, STM32F103xG
Table 9. Thermal characteristics
Symbol
Ratings
TSTG
TJ
Storage temperature range
Maximum junction temperature
Electrical characteristics
Value
Unit
–65 to +150
°C
150
°C
5.3
5.3.1
Operating conditions
General operating conditions
Table 10. General operating conditions
Symbol
Parameter
Conditions
Min
fHCLK Internal AHB clock frequency
0
fPCLK1 Internal APB1 clock frequency
0
fPCLK2 Internal APB2 clock frequency
0
VDD
Standard operating voltage
2
VDDA(1)
Analog operating voltage
(ADC not used)
Analog operating voltage
(ADC used)
2
Must be the same potential
as VDD(2)
2.4
VBAT Backup operating voltage
1.8
LQFP144
-
Power dissipation at TA =
LQFP100
-
PD
85 °C for suffix 6 or TA =
105 °C for suffix 7(3)
LQFP64
-
LFBGA144
-
Max
72
36
72
3.6
3.6
3.6
3.6
666
434
444
500
Unit
MHz
V
V
V
mW
WLCSP64
-
400
Ambient temperature for 6
suffix version
Maximum power dissipation –40 85
Low power dissipation(4)
–40 105
°C
TA
Ambient temperature for 7
suffix version
Maximum power dissipation –40 105
Low power dissipation(4)
–40 125
°C
6 suffix version
TJ
Junction temperature range
7 suffix version
–40 105
°C
–40 125
1. When the ADC is used, refer to Table 62: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 114).
4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 114).
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