CD00253742 Datasheet, PDF (59/120 Pages) STMicroelectronics – XL-density performance line ARM-based 32-bit MCU

STM32F103xF, STM32F103xG
Electrical characteristics
Low-speed internal (LSI) RC oscillator
Table 26. LSI oscillator characteristics ⁽¹⁾
Symbol
Parameter
Min
f_LSI(2)
Frequency
30
t_su(LSI)(3) LSI oscillator startup time
-
I_DD(LSI)(3) LSI oscillator power consumption
-
1. V_DD = 3 V, T_A = –40 to 105 °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Typ
40
-
0.65
Max
Unit
60
kHz
85
µs
1.2
µA
Wakeup time from low-power mode
The wakeup times given in Table 27 is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
● Stop or Standby mode: the clock source is the RC oscillator
● Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and V_DD supply
voltage conditions summarized in Table 10.
Table 27. Low-power mode wakeup timings
Symbol
Parameter
Typ
Unit
t_WUSLEEP(1) Wakeup from Sleep mode
1.8
µs
t_WUSTOP(1)
Wakeup from Stop mode (regulator in run mode)
Wakeup from Stop mode (regulator in low power mode)
3.6
µs
5.4
t_WUSTDBY(1) Wakeup from Standby mode
50
µs
1. The wakeup times are measured from the wakeup event to the point in which the user application code
reads the first instruction.
Doc ID 16554 Rev 3
59/120