English
Language : 

CD00253742 Datasheet, PDF (60/120 Pages) STMicroelectronics – XL-density performance line ARM-based 32-bit MCU
Electrical characteristics
STM32F103xF, STM32F103xG
5.3.8
5.3.9
PLL characteristics
The parameters given in Table 28 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 10.
Table 28. PLL characteristics
Symbol
Parameter
Value
Min
Typ
Max(1)
Unit
fPLL_IN
PLL input clock(2)
PLL input clock duty cycle
1
8.0
40
-
25
MHz
60
%
fPLL_OUT
tLOCK
Jitter
PLL multiplier output clock
PLL lock time
Cycle-to-cycle jitter
16
-
-
-
-
-
72
MHz
200
µs
300
ps
1. Based on characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 29. Flash memory characteristics
Symbol
Parameter
Conditions
Min
tprog 16-bit programming time TA = –40 to +105 °C
40
tERASE Page (2 KB) erase time TA = –40 to +105 °C
20
tME Mass erase time
TA = –40 to +105 °C
20
Read mode
fHCLK = 72 MHz with 2 wait
-
states, VDD = 3.3 V
IDD Supply current
Write mode
fHCLK = 72 MHz, VDD = 3.3 V
-
Erase mode
fHCLK = 72 MHz, VDD = 3.3 V
-
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
-
Vprog Programming voltage
2
1. Guaranteed by design, not tested in production.
Typ Max(1) Unit
52.5 70
µs
-
40 ms
-
40 ms
-
28 mA
-
7
mA
-
5
mA
-
50 µA
-
3.6
V
60/120
Doc ID 16554 Rev 3