CD00253742 Datasheet, PDF (103/120 Pages) STMicroelectronics – XL-density performance line ARM-based 32-bit MCU

STM32F103xF, STM32F103xG
Electrical characteristics
Table 65.
Symbol
ADC accuracy^{(1) (2)(3)}
Parameter
Test conditions
Typ Max⁽⁴⁾ Unit
ET Total unadjusted error
EO Offset error
EG Gain error
ED Differential linearity error
EL Integral linearity error
f_PCLK2 = 56 MHz,
f_ADC = 14 MHz, R_AIN < 10 kΩ,
V_DDA = 2.4 V to 3.6 V
Measurements made after
ADC calibration
±2
±1.5
±1.5
±1
±1.5
±5
±2.5
±3
LSB
±2
±3
1. ADC DC accuracy values are measured after internal calibration.
2. Better performance could be achieved in restricted V_DD, frequency, V_REF and temperature ranges.
3. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (non-
robust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to
standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for I_INJ(PIN) and ΣI_INJ(PIN) in Section 5.3.14 does not
affect the ADC accuracy.
4. Preliminary values.
Figure 55. ADC accuracy characteristics
4095
4094
4093
7
6
5
4
3
2
1
[1LSB_IDEAL
=V^REF+
4096
(or
V_{DDA depending}
4096
on
package)]
E_G
(2)
E_T
(3)
(1)
E_O
E_L
E_D
1 LSB_IDEAL
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E_T=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
E_O=Offset Error: deviation between the first actual
transition and the first ideal one.
E_G=Gain Error: deviation between the last ideal
transition and the last actual one.
E_D=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
E_L=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
0
1234567
V_SSA
4093 4094 4095 4096
V_DDA
ai14395b
Doc ID 16554 Rev 3
103/120