CD00191174 Datasheet, PDF (56/112 Pages) STMicroelectronics – High-density access line, ARM-based 32-bit MCU

Electrical characteristics
STM32F101xC, STM32F101xD, STM32F101xE
5.3.8
5.3.9
PLL characteristics
The parameters given in Table 28 are derived from tests performed under ambient
temperature and V_DD supply voltage conditions summarized in Table 10.
Table 28. PLL characteristics
Symbol
Parameter
Min⁽¹⁾
Value
Typ
Max⁽¹⁾
Unit
f_{PLL_IN}
PLL input clock⁽²⁾
PLL input clock duty cycle
1
8.0
25
MHz
40
60
%
f_{PLL_OUT}
t_LOCK
Jitter
PLL multiplier output clock
PLL lock time
Cycle-to-cycle jitter
16
36
MHz
200
µs
300
ps
1. Based on characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by f_{PLL_OUT}.
Memory characteristics
Flash memory
The characteristics are given at T_A = –40 to 85 °C unless otherwise specified.
Table 29. Flash memory characteristics
Symbol
Parameter
Conditions
Min
t_prog 16-bit programming time
T_A = –40 to +85 °C
40
t_ERASE Page (2 KB) erase time
T_A = –40 to +85 °C
20
t_ME Mass erase time
T_A = –40 to +85 °C
20
Read mode
f_HCLK = 36 MHz with 1
wait state, V_DD = 3.3 V
I_DD Supply current
Write mode
f_HCLK = 36 MHz, V_DD =
3.3 V
Erase mode
f_HCLK = 36 MHz, V_DD =
3.3 V
V_prog Programming voltage
Power-down mode / Halt,
V_DD = 3.0 to 3.6 V
2
1. Guaranteed by design, not tested in production.
Typ Max⁽¹⁾ Unit
52.5 70
µs
40 ms
40 ms
28 mA
7
mA
5
mA
50 µA
3.6
V
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Doc ID 14610 Rev 8