K4R271669A Datasheet, PDF (57/64 Pages) Samsung semiconductor – 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R271669A/K4R441869A
Direct RDRAM^™
Absolute Maximum Ratings
Table 23: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
V_I,ABS
V_DD,ABS, V_DDA,ABS
T_STORE
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
- 0.3
V_DD+0.3
V
- 0.5
V_DD+1.0
V
- 50
100
°C
I_DD - Supply Current Profile
Table 24: Supply Current Profile
I_DD value RDRAM blocks consuming power^a
I_DD,PDN
I_DD,NAP
I_DD,STBY
I_DD,ATTN
I_DD,ATTN-W
I_DD,ATTN-R
Self-refresh only for INIT.LSR=0
T/RCLK-Nap
T/RCLK, ROW-demux
T/RCLK, ROW-demux, COL-demux
T/RCLK, ROW-demux,COL-demux,DQ-demux,1•WR-SenseAmp,
4•ACT-Bank
T/RCLK, ROW-demux,COL-demux,DQ-mux,1•RD-SenseAmp,
4•ACT-Bank ^c
Max
-45
-800
3000
4
105
165
575/625^b
490/520
Max
-45
-711
3000
4
100
155
525/580
450/480
Max
-53.3
-600
3000
4
90
140
455/500
Unit
µA
mA
mA
mA
mA
400/420
mA
a. The CMOS interface consumes power in all power states.
b. x16/x18 RDRAM data width
c. This does not include the IOL sink current. The RDRAM dissipates IOL•VOL in each output driver when a logic one is driven.
Page 55
Rev. 1.02 Jan. 2000