K4R271669A Datasheet, PDF (27/64 Pages) Samsung semiconductor – 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R271669A/K4R441869A
Direct RDRAM^™
T₀ T₁ T₂ T₃ T₄ T₅ T₆ T₇ T₈ T₉ T₁₀ T₁₁ T₁₂T₁₃ T₁₄ T₁₅ T₁₆T₁₇ T₁₈ T₁₉ T₂₀T₂₁ T₂₂ T₂₃ T₂₄T₂₅ T₂₆ T₂₇ T₂₈T₂₉ T₃₀ T₃₁ T₃₂T₃₃ T₃₄ T₃₅ T₃₆T₃₇ T₃₈ T₃₉ T₄₀T₄₁ T₄₂ T₄₃ T₄₄T₄₅ T₄₆ T₄₇
CTM/CFM
ROW2
..ROW0
COL4
..COL0
DQA8..0
DQB8..0
ACT a0
ACT b0
t_RC
ACT c0
ACT d0
Transaction e can use the
same bank as transaction a
ACT e0
ACT f0
RD z1
Q (x2)
t_RCD
RD z2 RD a1
PREX y3
Q (y1) Q (y2)
RD a2 RD b1
PREX z3
t_CAC
Q (z1) Q (z2)
RD b2
PREX a3
Q (a1)
RD c1
Q (a2)
t_RR
RD c2 RD d1
PREX b3
Q (b1) Q (b2)
RDd2
PREX c3
Q (c1)
RD e1
Q (c2)
RD e2
PREX d3
Q (d1)
Transaction y: RD
Transaction z: RD
Transaction a: RD
Transaction b: RD
Transaction c: RD
Transaction d: RD
Transaction e: RD
Transaction f: RD
y0 = {Da,Ba+4,Ry}
z0 = {Da,Ba+6,Rz}
a0 = {Da,Ba,Ra}
b0 = {Da,Ba+2,Rb}
c0 = {Da,Ba+4,Rc}
d0 = {Da,Ba+6,Rd}
e0 = {Da,Ba,Re}
f0 = {Da,Ba+2,Rf}
y1 = {Da,Ba+4,Cy1}
z1 = {Da,Ba+6,Cz1}
a1 = {Da,Ba,Ca1}
b1 = {Da,Ba+2,Cb1}
c1 = {Da,Ba+4,Cc1}
d1 = {Da,Ba+6,Cd1}
e1 = {Da,Ba,Ce1}
f1 = {Da,Ba+2,Cf1}
y2= {Da,Ba+4,Cy2}
z2= {Da,Ba+6,Cz2}
a2= {Da,Ba,Ca2}
b2= {Da,Ba+2,Cb2}
c2= {Da,Ba+4,Cc2}
d2= {Da,Ba+6,Cd2}
e2= {Da,Ba,Ce2}
f2= {Da,Ba+2,Cf2}
y3 = {Da,Ba+4}
z3 = {Da,Ba+6}
a3 = {Da,Ba}
b3 = {Da,Ba+2}
c3 = {Da,Ba+4}
d3 = {Da,Ba+6}
e3 = {Da,Ba}
f3 = {Da,Ba+2}
Figure 21: Interleaved Read Transaction with Two Dualoct Data Length
The second bubble type t_CBUB2 is inserted (as a NOCOP
command) by the controller between a WR and RD
command on the COL pins when there is a WR-WR-RD
sequence to the same device. This bubble enables write data
to be retired from the write buffer without being lost, and is
explained in detail in Figure 18. There would be no bubble if
address c0 and address d0 were directed to different devices.
This bubble appears on the DQA and DQB pins as t_DBUB2
between a write data dualoct D and read data dualoct Q. This
bubble also appears on the ROW pins as t_RBUB2.
T₀ T₁ T₂ T₃ T₄ T₅ T₆ T₇ T₈ T₉ T₁₀ T₁₁ T₁₂T₁₃ T₁₄ T₁₅ T₁₆T₁₇ T₁₈ T₁₉ T₂₀T₂₁ T₂₂ T₂₃ T₂₄T₂₅ T₂₆ T₂₇ T₂₈T₂₉ T₃₀ T₃₁ T₃₂T₃₃ T₃₄ T₃₅ T₃₆T₃₇ T₃₈ T₃₉ T₄₀T₄₁ T₄₂ T₄₃ T₄₄T₄₅ T₄₆ T₄₇
CTM/CFM
ROW2
..ROW0
ACT a0
t_RBUB1
ACT b0
COL4
..COL0
DQA8..0
DQB8..0
t_CBUB2
RD z1
t_DBUB1
D (y2)
RD z2 RD a1
t_DBUB2
RD a2
PREX z3
Q (z1)
ACT c0
t_RBUB2
Transaction e can use the
same bank as transaction a
ACT d0
ACT e0
t_CBUB1
WR b1 WRA b2
MSK (y2) PREX a3
WR c1
MSK (b1)
WRA c2
MSK (b2)
t_CBUB2
NOCOP NOCOP
MSK (c1) MSK (c2)
RDd0
Q (z2)
Q (a1)
Q (a2)
D (b1)
D (b2)
t_DBUB1
D (c1) D (c2)
RDf1
Transaction y: WR
Transaction z: RD
Transaction a: RD
Transaction b: WR
Transaction c: WR
Transaction d: RD
Transaction e: RD
Transaction f: WR
y0 = {Da,Ba+4,Ry}
z0 = {Da,Ba+6,Rz}
a0 = {Da,Ba,Ra}
b0 = {Da,Ba+2,Rb}
c0 = {Da,Ba+4,Rc}
d0 = {Da,Ba+6,Rd}
e0 = {Da,Ba,Re}
f0 = {Da,Ba+2,Rf}
y1 = {Da,Ba+4,Cy1}
z1 = {Da,Ba+6,Cz1}
a1 = {Da,Ba,Ca1}
b1 = {Da,Ba+2,Cb1}
c1 = {Da,Ba+4,Cc1}
d1 = {Da,Ba+6,Cd1}
e1 = {Da,Ba,Ce1}
f1 = {Da,Ba+2,Cf1}
y2= {Da,Ba+4,Cy2}
z2= {Da,Ba+6,Cz2}
a2= {Da,Ba,Ca2}
b2= {Da,Ba+2,Cb2}
c2= {Da,Ba+4,Cc2}
d2= {Da,Ba+6,Cd2}
e2= {Da,Ba,Ce2}
f2= {Da,Ba+2,Cf2}
y3 = {Da,Ba+4}
z3 = {Da,Ba+6}
a3 = {Da,Ba}
b3 = {Da,Ba+2}
c3 = {Da,Ba+4}
d3 = {Da,Ba+6}
e3 = {Da,Ba}
f3 = {Da,Ba+2}
Figure 22: Interleaved RRWW Sequence with Two Dualoct Data Length
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Rev. 1.02 Jan. 2000