K4R271669A Datasheet, PDF (48/64 Pages) Samsung semiconductor – 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R271669A/K4R441869A
Direct RDRAM^™
Electrical Characteristics
Table 20: Electrical Characteristics
Symbol
Θ_JC
I_REF
I_OH
I_ALL
∆I_OL
r_OUT
I_I,CMOS
V_OL,CMOS
V_OH,CMOS
Parameter and Conditions
Junction-to-Case thermal resistance
V_REF current @ V_REF,MAX
RSL output high current @ (0≤V_OUT≤V_DD)
RSL I_OL current @ V_OL = 0.9V, V_DD,MIN , T_J,MAXa
RSL I_OL current resolution step
Dynamic output impedance
CMOS input leakage current @ (0≤V_I,CMOS≤V_CMOS)
CMOS output voltage @ I_OL,CMOS= 1.0mA
CMOS output high voltage @ I_OH,CMOS= -0.25mA
Min
-
-10
-10
30.0
-
150
-10.0
-
V_CMOS-0.3
Max
Unit
0.2
°C/Watt
10
µA
10
µA
90.0
mA
2.0
mA
-
Ω
10.0
µA
0.3
V
-
V
a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current.
Timing Characteristics
Table 21: Timing Characteristics
Symbol
tQ
t_QR, t_QF
t_Q1
t_HR
t_QR1, t_QF1
t_PROP1
t_NAPXA
t_NAPXB
t_PDNXA
t_PDNXB
t_AS
t_SA
t_ASN
t_ASP
Parameter
CTM-to-DQA/DQB output time
@ tCYCLE=3.33ns
@ tCYCLE=2.81ns
@ tCYCLE=2.50ns
DQA/DQB output rise and fall times
SCK(neg)-to-SIO0 delay @ C_LOAD,MAX = 20pF (SD read data valid).
SCK(pos)-to-SIO0 delay @ C_LOAD,MAX = 20pF (SD read data hold).
SIO_OUT rise/fall @ C_LOAD,MAX = 20pF
SIO0-to-SIO1 or SIO1-to-SIO0 delay @ C_LOAD,MAX = 20pF
NAP exit delay - phase A
NAP exit delay - phase B
PDN exit delay - phase A
PDN exit delay - phase B
ATTN-to-STBY power state delay
STBY-to-ATTN power state delay
ATTN/STBY-to-NAP power state delay
ATTN/STBY-to-PDN power state delay
Min
-0.350^a,c
-0.300^b,c
-0.260^c
0.2
-
2
-
-
-
-
-
-
-
-
-
-
Max
+0.350^a,c
+0.300^b,c
+0.260^c
0.45
10
-
5
10
50
40
4
9000
1
0
8
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
µs
t_CYCLE
t_CYCLE
t_CYCLE
t_CYCLE
t_CYCLE
Figure(s)
Figure 55
Figure 55
Figure 58
Figure 58
Figure 58
Figure 58
Figure 48
Figure 48
Figure 48
Figure 48
Figure 46
Figure 46
Figure 47
Figure 47
a. This parameter also applies to a -800 or -711 part when operated with t_CYCLE=3.33ns.
b. This parameter also applies to a -800 part when operated with t_CYCLE=2.81ns.
c. t_Q,MIN and t_Q,MAX for other t_CYCLE values can be interpolated between or extrapolated from the timings at the 3 specified t_CYCLE values.
Page 46
Rev. 1.02 Jan. 2000