K4R271669A Datasheet, PDF (33/64 Pages) Samsung semiconductor – 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R271669A/K4R441869A
Direct RDRAM^™
SA11..SA0
045₁₆
Register
NAPX
046₁₆
047₁₆
048₁₆
PDNXA
PDNX
TPARM
049₁₆
04a₁₆
04b₁₆
TFRM
TCDLY1
SKIP
04c₁₆
04d₁₆
04e₁₆
04f₁₆
080₁₆ - 0ff₁₆
TCYCLE
TEST77
TEST78
TEST79
reserved
Field
NAPXA
NAPX
DQS
PDNXA
PDNX
TCAS
TCLS
TCDLY0
TFRM
TCDLY1
AS
MSE
MS
TCYCLE
TEST77
TEST78
TEST79
reserved
Table 16: Control Register Summary
read-write/ read-only Description
read-write, 5 bits
read-write, 5 bits
read-write, 1 bits
read-write, 13 bits
read-write, 13 bits
read-write, 2 bits
read-write, 2 bits
read-write, 3 bits
read-write, 4 bits
read-write, 3 bits
read, 1 bit
read-write, 1 bit
read-write, 1 bit
read-write, 14 bits
read-write, 16 bits
read-write, 16 bits
read-write, 16 bits
vendor-specific
NAP exit. Specifies length of NAP exit phase A.
NAP exit. Specifies length of NAP exit phase A + phase B.
DQ select. Selects CMD framing for NAP/PDN exit.
PDN exit. Specifies length of PDN exit phase A.
PDN exit. Specifies length of PDN exit phase A + phase B.
t_CAS-C core parameter. Determines t_OFFP datasheet parameter.
t_CLS-C core parameter. Determines t_CAC and t_OFFP parameters.
t_CDLY0-C core parameter. Programmable delay for read data.
t_FRM-C core parameter. Determines ROW-COL packet framing interval.
t_CDLY1-C core parameter. Programmable delay for read data.
Auto Skip value established by the SETF command.
Manual Skip Enable. Allows the MS value to override the AS value.
Manual Skip value.
t_CYCLE datasheet parameter. Specifies cycle time in 64ps units.
Test register. Write with zero after SIO reset.
Test register. Do not read or write after SIO reset.
Test register. Do not read or write after SIO reset.
Vendor-specific test registers. Do not read or write after SIO reset.
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Rev. 1.02 Jan. 2000