K4R271669A Datasheet, PDF (2/64 Pages) Samsung semiconductor – 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R271669A/K4R441869A
Direct RDRAM^™
Revision History
Version 1.0 (July 1999) - Preliminary
- Based on the Rambus Datasheet 1.0 ver.
Version 1.01 (October 1999)
On page 1
- Delete the part numbers of low power
On page 32
- Add the data of CNFGA Register @ Figure 28
On page 33
- Add the data of CNFGB Register @ Figure 29 and correct the CORG4..0 field of CNFGB register
On page 44
- Add the Tj value from TBD to Max. 100°C @ Table 18
On page 46
- Add the Θ_JC value from TBD to 0.2°C/Watt @ Table 20
On page 55
- Add the current values for 356MHz and 300MHz RDRAM device
Version 1.02 (January 2000)
* Change the part number of RDRAM Component according to New Code System since ’00.Jan.1st
On page 45
- Reduce swing of V_IH,CMOS & V_IL,CMOS from “0.5V_CMOS±0.6V“ to “0.5V_CMOS±0.4V“
- Relax tS1 from 1.0ns to “1.25ns“ ( But, Keep tH1 as 1.0ns)
Page 0
Rev. 1.02 Jan. 2000