RX21A_15 Datasheet, PDF (121/132 Pages) Renesas Technology Corp – Renesas MCUs

RX21A Group
5. Electrical Characteristics
Table 5.49 ROM (Flash Memory for Code Storage) Characteristics (3)
: medium-speed operating modes 1B and 2B
Conditions: VCC = AVCC0 = AVCCA = 1.8 to 3.6 V, VSS = AVSS0 = AVSSA = VREFL = VREFL0 = VREFDSL = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +105°C
FCLK = 4 MHz
FCLK = 25 MHz*¹
Item
Symbol
Unit
Min.
Typ. Max.
Min.
Typ.
Max.
Programming time
when N_PEC ≤ 100 times
Programming time
when N_PEC > 100 times
Erasure time
when N_PEC ≤ 100 times
Erasure time
when N_PEC > 100 times
2 bytes
8 bytes
128 bytes
2 bytes
8 bytes
128 bytes
2 Kbytes
2 Kbytes
t_P2
t_P8
t_P128
t_P2
t_P8
t_P128
t_E2K
t_E2K
Suspend delay time during programming t_SPD
(in programming/erasure priority mode)
—
0.25 5.0
—
0.21
2.9
ms
—
0.25 5.3
—
0.21
3.1
—
0.92 14.0
—
0.66
8.5
—
0.31 6.2
—
0.26
3.6
ms
—
0.31 6.6
—
0.26
3.8
—
1.09 17.5
—
0.78
10.3
—
21.0 113.6
—
18.6
48.7
ms
—
25.6 220.6
—
22.7 94.5 (1000 times ≥ ms
N_PEC > 100 times),
102.9 (10000 times ≥
N_PEC > 1000 times)
—
— 1.7
—
—
1.604
ms
First suspend delay time during
t_SPSD1
—
— 220
—
—
124
μs
programming (in suspend priority mode)
Second suspend delay time during
t_SPSD2
—
— 1.7
—
—
1.604
ms
programming (in suspend priority mode)
Suspend delay time during erasing
t_SED
—
— 1.7
—
—
1.604
ms
(in programming/erasure priority mode)
First suspend delay time during erasing t_SESD1
—
— 220
—
—
124
μs
(in suspend priority mode)
Second suspend delay time during
t_SESD2
—
— 1.7
—
—
1.604
ms
erasing (in suspend priority mode)
FCU reset time
t_FCUR
20 μs or
—
—
20 μs or
—
—
μs
longer and
longer and
FCLK × 6
FCLK × 6
or greater
or greater
Note 1. The FCLK operating frequency is 12.5 MHz (max.) when the voltage is in the range from 1.8 V to less than 2.7 V in mid-speed
operating mode 2B.
R01DS0129EJ0110 Rev.1.10
Aug 28, 2014
Page 121 of 132