NT5DS4M32EG Datasheet, PDF (44/46 Pages) NanoAmp Solutions, Inc. – 1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL

NanoAmp Solutions, Inc.
NT5DS4M32EG
Advance Information
Table 17: Pulldown and Pullup IV Characteristics
Voltage
(V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
Pulldown Current(mA)
Typical
Low
Typical
High
Min
Max
3.3
3.7
2.5
4.8
6.6
7.3
5.0
9.4
9.8
10.9
7.4
14.0
13.0
14.4
10.0
18.3
16.1
17.8
12.4
22.6
18.7
21.1
14.9
26.7
21.3
23.9
17.4
30.7
23.6
26.9
19.9
34.1
25.6
29.8
21.4
37.7
27.7
32.6
23.0
41.2
29.2
35.2
24.2
44.5
30.3
37.7
25.0
47.7
31.3
40.1
25.4
50.7
32.0
42.4
25.6
53.5
32.5
44.4
25.8
56.0
32.7
46.4
25.9
58.6
32.9
48.1
26.2
60.6
33.2
49.8
26.4
62.6
33.5
51.5
26.5
64.6
33.8
52.5
26.7
66.6
33.9
53.5
26.8
68.3
34.2
54.5
26.9
69.9
34.5
55.0
27.0
71.5
34.6
55.5
27.0
72.9
34.9
56.0
27.1
74.1
Typical
Low
-3.3
-6.6
-9.8
-12.9
-16.1
-18.5
-20.5
-22.2
-23.6
-24.8
-25.8
-26.6
-27.0
-27.2
-27.4
-27.5
-27.6
-27.7
-27.8
-27.9
-28.0
-28.1
-28.2
-28.2
-28.3
Pullup Current(mA)
Typical
High
-4.1
-7.8
-11.4
-14.9
-18.4
-21.9
-25.3
-28.7
-32.1
-35.4
-38.6
-41.9
45.2
-48.4
-51.6
-54.7
-57.8
-60.7
-64.1
-67.0
-69.8
-72.7
-75.6
-78.4
-81.3
Min
-2.5
-5.0
-7.4
-10.0
-12.4
-14.9
-17.4
-19.5
20.6
-20.9
-21.1
-21.2
-21.3
-21.4
-21.5
-21.6
-21.7
-21.8
-21.8
-21.9
-21.9
-22.0
-22.0
-22.1
-22.2
Max
-4.9
-9.7
-14.5
-19.2
-23.9
-28.4
-32.9
-37.3
-41.7
-46.0
-50.7
-54.3
-58.4
-62.4
-66.4
-70.4
-73.8
-77.8
-81.3
-84.7
-88.1
-91.6
-95.0
-97.0
-101.3
Temperature (Ambient)
Typical 25° C
Minimum70°C
Maximum 0°C
Vdd/Vddq
Typical 2.50V / 2.50V
Minimum 2.375V / 2.375V
Maximum2.625V / 2.625V
The above characteristics are specified under best, worst and normal process variation/conditions
Doc # 14-02-045 Rev A ECN 01-1118
44
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.