NT5DS4M32EG Datasheet, PDF (24/46 Pages) NanoAmp Solutions, Inc. – 1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL

NanoAmp Solutions, Inc.
NT5DS4M32EG
Advance Information
Table 13: AC Characteristics (cont)
Parameter
-5G
-5
-6
Symbol
Unit Note
Min Max Min Max Min Max
Row cycle time
t_RC
60
--
60
--
60
--
ns
Refresh cycle time
t_RFC
70
--
70
--
70
--
ns
Row active time
t_RAS
40 100k 40 100k 40 100k ns
/RAS to /CAS delay to read
t_RCDR
18
--
18
--
18
--
ns
/RAS to /CAS delay to write
t_RCDW
10
--
10
--
10
--
ns
Row precharge time
t_RP
18
--
18
--
18
--
ns
Row active to Row active
t_RRD
2
--
2
--
2
-- tCK
Last data in to Row Precharge t_WR
2
--
2
--
2
-- tCK 1
Last data in to Row Precharge
(Auto Precharge)
t_{WR_A}
2
--
2
--
2
-- tCK 1
Internal Write in to Read
t_WTR
2
--
2
--
2
-- tCK 1
Col. address to Col. address
t_CCD
1
--
1
--
1
-- tCK
Mode reigister set cycle time
t_MRD
2
--
2
--
2
-- tCK
Auto precharge write recovery
+ precharge
t_DAL
6
--
6
--
6
-- tCK
Exit self refresh to active
command
t_XSA
75
--
75
--
75
--
ns
Exit self refresh to read
command
t_XSR
200
--
200
--
200
--
tCK
Power down exit time
t_PDEX
1tCK
+tIS
--
1tCK
+tIS
--
1tCK
+tIS
--
ns
Refresh interval time
t_REF
7.8
--
7.8
--
7.8
--
us
Note 1
1. For normal write operation, even numbers of Din are to be written inside DRAM
-. AC parameters for DLL Disable Mode(143MHz ~ 83MHz, CL2/3 Only)
Doc # 14-02-045 Rev A ECN 01-1118
24
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.