NT5DS4M32EG Datasheet, PDF (43/46 Pages) NanoAmp Solutions, Inc. – 1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL

NanoAmp Solutions, Inc.
NT5DS4M32EG
Advance Information
IBIS : I/V CHARACTERISTICS FOR INPUT AND OUTPUT BUFFERS
Reduced Output Driver Characteristics.
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of
below figure.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of below figure
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
0.1
0.6
1.1
1.6
2.1
Maximum
Typical High
Typical Low
Minimum
Vout (V)
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of
below figure.
4. The full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within
the outer bounding lines of the V-I curve of below figure
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
-70.0
-80.0
-90.0
-100.0
-110.0
0.1
0.6
1.1
1.6
2.1
Minimum
Typical Low
Typical High
Maximum
Vout (V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device
drain to source voltage from 0 to VDDQ/2
6. The full variation in the ratio of the nominal pullup to pulldown current should be unity ±0%, for device drain to
source voltages from 0 to VDDQ/2
Doc # 14-02-045 Rev A ECN 01-1118
43
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.