MC68HC908RK2 Datasheet, PDF (225/232 Pages) Motorola, Inc – Microcontroller Unit

Preliminary Electrical Specifications
Memory Characteristics
16.12 Memory Characteristics
Characteristic
Symbol
Min Typ Max
Unit
RAM data retention voltage
V_RDR
1.3
—
—
V
FLASH pages per row
—
8
—
8
Pages
FLASH bytes per page
—
1
—
1
Bytes
FLASH read bus clock frequency
f_Read(1)
32 K
—
2.5 M
Hz
FLASH charge pump clock frequency
(see 4.5 FLASH 2TS Charge Pump Frequency
Control)
f_Pump(2)
1.8
—
2.5
MHz
FLASH block/bulk erase time
t_Erase
100
—
—
ms
FLASH row erase time
t_RowErase
30
—
—
ms
FLASH high voltage kill time
t_Kill
200
—
—
µs
FLASH return to read time
t_HVD
50
—
—
µs
FLASH page program pulses
fls_Pulses(3)
—
—
15
Pulses
FLASH page program step size
t_Step(4)
1.0
—
1.2
ms
FLASH cumulative program time per row between
erase cycles
t_Row(5)
—
—
Page
8
program
cycles
FLASH HVEN low to MARGIN high time
t_HVTV
50
—
—
µs
FLASH MARGIN high to PGM low time
t_VTP
150
—
—
µs
FLASH 2TS row program endurance⁽⁶⁾
—
10⁴
-—
-—
Cycles
FLASH data retention time⁽⁷⁾
—
10
-—
-—
Years
1. f_READ is defined as the frequency range for which the FLASH memory can be read.
2. f_Pump is defined as the charge pump clock frequency required for program, erase, and margin read operations.
3. fls_Pulses is defined as the number of pulses used to program the FLASH using the required smart program algorithm.
4. t_Step is defined as the amount of time during one page program cycle that HVEN is held high.
5. t_Row is defined as the cumulative time a row can see the program voltage before the row must be erased before further
programming.
6. The minimum row endurance value specifies each row of the FLASH 2TS memory is guaranteed to work for at least this
many erase/program cycles.
7. The FLASH is guaranteed to retain data over the entire temperature range for at least the minimum time specified.
MC68HC908RK2 — Rev. 4.0
MOTOROLA
Preliminary Electrical Specifications
Advance Information
225