MT40A1G4RH-083E Datasheet, PDF (360/365 Pages) Micron Technology – 4Gb: x4, x8, x16 DDR4 SDRAM

Table 158: Electrical Characteristics and AC Timing Parameters (Continued)
DDR4-2666
DDR4-2933
DDR4-3200
Parameter
Symbol
Min Max Min Max Min Max
Power-down exit period: ODT either syn-
PDX
chronous or asynchronous
t_{ANPD +} t_XSDLL
Power-Down Entry Minimum Timing
ACTIVATE command to power-down en-
t_ACTPDEN
2
–
2
–
2
–
try
PRECHARGE/PRECHARGE ALL command
t_PRPDEN
2
–
2
–
2
–
to power-down entry
REFRESH command to power-down entry ^tREFPDEN
2
–
2
–
2
–
MRS command to power-down entry
t_MRSPDEN
MIN = ^tMOD (MIN)
READ/READ with auto precharge com-
mand to power-down entry
t_RDPDEN
MIN = RL + 4 + 1
WRITE command to power-down entry
(BL8OTF, BL8MRS, BC4OTF)
t_WRPDEN
MIN = WL + 4 + ^tWR/^tCK (AVG)
WRITE command to power-down entry
(BC4MRS)
t_WRPBC4DEN
MIN = WL + 2 + ^tWR/^tCK (AVG)
WRITE with auto precharge command to
power-down entry (BL8OTF,
BL8MRS,BC4OTF)
t_WRAPDEN
MIN = WL + 4 + WR + 1
WRITE with auto precharge command to ^tWRAPBC4DEN
power-down entry (BC4MRS)
MIN = WL + 2 + WR + 1
ODT Timing
Direct ODT turn-on latency
DODTLon
WL - 2 = CWL + AL + PL - 2
Direct ODT turn-off latency
DODTLoff
WL - 2 = CWL + AL + PL - 2
R_TT dynamic change skew
Asynchronous R_TT(NOM) turn-on delay
(DLL off)
t_ADC
t_AONAS
0.3
0.7 0.28 0.72 0.28 0.72
1
9
1
9
1
9
Asynchronous R_TT(NOM) turn-off delay
(DLL off)
t_AOFAS
1
9
1
9
1
9
ODT HIGH time with WRITE command
ODTH8 1^tCK
6
–
6
–
6
–
and BL8
ODTH8 2^tCK
7
–
7
–
7
–
ODT HIGH time without WRITE command ODTH4 1^tCK
4
–
4
–
4
–
or with WRITE command and BC4
ODTH4 2^tCK
5
–
5
–
5
–
Write Leveling Timing
Reserved
Min Max
Unit Notes
CK
CK
CK
CK
CK
1
CK
1
CK
1
CK
1
CK
1
CK
1
CK
CK
CK
ns
ns
CK
CK