MT40A1G4RH-083E Datasheet, PDF (346/365 Pages) Micron Technology – 4Gb: x4, x8, x16 DDR4 SDRAM

Table 157: Electrical Characteristics and AC Timing Parameters: DDR4-1600 through DDR4-2400 (Continued)
Parameter
CS_n LOW and valid input to valid output
CK_t, CK_c valid and CKE HIGH after TEN
goes HIGH
ZQCL command: Long POWER-UP and
calibration time
RESET operation
Normal opera-
tion
ZQCS command: Short calibration time
The V_REF increment/decrement step time
Enter V_REFDQ training mode to the first
write or V_REFDQ MRS command delay
Exit V_REFDQ training mode to the first
WRITE command delay
Exit reset from CKE HIGH to a valid com-
mand
RESET_L pulse low after power stable
RESET_L pulse low at power-up
Begin power supply ramp to power sup-
plies stable
RESET_n LOW to power supplies stable
RESET_n LOW to I/O and R_TT High-Z
Symbol
t_{CT_Valid}
t_{CTCKE_Valid}
DDR4-1600
Min Max
–
200
10
–
DDR4-1866
Min Max
–
200
10
–
DDR4-2133
Min Max
–
200
10
–
DDR4-2400
Min Max
–
200
10
–
Calibration and V_REFDQ Train Timing
t_ZQinit
1024
–
1024
–
1024
–
1024
–
t_ZQoper
512
–
512
–
512
–
512
–
t_ZQCS
128
–
128
–
128
–
128
–
V_{REF_time}
t_VREFDQE
MIN = 150ns
MIN = 150ns
t_VREFDQX
MIN = 150ns
Initialization and Reset Timing
t_XPR
MIN = greater of 5CK or ^tRFC (MIN) + 10ns
t_{PW_REST_S}
0.1
–
0.1
–
0.1
–
0.1
–
t_{PW_REST_L 200}
–
200
–
200
–
200
–
t_VDDPR
MIN = N/A; MAX = 200
t_RPS
t_IOZ
MIN = 0; MAX = 0
MIN = N/A; MAX = undefined
Refresh Timing
Unit
ns
ns
CK
CK
CK
ns
ns
CK
μs
μs
ms
ns
ns
Notes
1
1
1