MT40A1G4RH-083E Datasheet, PDF (310/365 Pages) Micron Technology – 4Gb: x4, x8, x16 DDR4 SDRAM

4Gb: x4, x8, x16 DDR4 SDRAM
Current Specifications – Measurement Conditions
Figure 241: Thermal Measurement Point
(L/2)
T_C test point
L
(W/2)
W
Current Specifications – Measurement Conditions
I_DD, I_PP, and I_DDQ Measurement Conditions
I_DD, I_PP, and I_DDQ measurement conditions, such as test load and patterns, are defined
in this section.
• I_DD currents (I_DD0, I_DD1, I_DD2N, I_DD2NT, I_DD2P, I_DD2Q, I_DD3N, I_DD3P, I_DD4R, I_DD4W, I_DD5R,
I_DD6N, I_DD6E, I_DD6R, I_DD7, and I_DD8) are measured as time-averaged currents with all
V_DD balls of the device under test grouped together. I_PP and I_DDQ currents are not in-
cluded in I_DD currents.
• I_PP currents are I_PPSB for standby cases (I_DD2N, I_DD2NT, I_DD2P, I_DD2Q, I_DD3N, I_DD3P, I_DD8);
I_PP0 for active cases (I_DD0,I_DD1, I_DD4R, I_DD4W); I_PP5R and I_PP6N for self refresh cases
(I_DD6N, I_DD6E, I_DD6R), and I_PP7. These have the same definitions as the I_DD currents ref-
erenced but are measured on the V_PP supply.
• I_DDQ currents (I_DDQ2NT) are measured as time-averaged currents with V_DDQ balls of
the device under test grouped together. I_DD current is not included in I_DDQ currents.
Note: I_DDQ values cannot be directly used to calculate the I/O power of the device. They
can be used to support correlation of simulated I/O power to actual I/O power. In
DRAM module application, I_DDQ cannot be measured separately because V_DD and V_DDQ
are using a merged-power layer in the module PCB.
The following definitions apply for I_DD, I_DDP and I_DDQ measurements.
• “0” and “LOW” are defined as V_IN ≤V_IL(AC)max
• “1” and “HIGH” are defined as V_IN ≥V_IH(AC)min
• “Midlevel” is defined as inputs V_REF = V_DD/2
• Timings used for I_DD, I_DDP and I_DDQ measurement-loop patterns are provided in the
Current Test Definition and Patterns section.
• Basic I_DD, I_PP, and I_DDQ measurement conditions are described in the Current Test
Definition and Patterns section.
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4gb_ddr4_dram.pdf - Rev. G 1/17 EN
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