N25Q128A11B1241F Datasheet, PDF (170/185 Pages) Micron Technology – 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface

Initial delivery state
12 Initial delivery state
N25Q128 - 1.8 V
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
13 Maximum rating
Stressing the device outside the ratings listed here may cause permanent damage to the
device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the operating sections of this specification, is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 28. Absolute maximum ratings
Symbol
Parameter
Min
Max Unit
T_STG
T_LEAD
Storage temperature
Lead temperature during soldering
–65
150
°C
see⁽¹⁾
°C
V_IO
Input and output voltage (with respect to ground)
–0.6 V_CC + 0.6 V
V_CC
VPP
Supply voltage
Fast program/erase voltage⁽²⁾
–0.6
4.0
V
–0.2
10.0
V
V_ESD Electrostatic discharge voltage (human body model)⁽³⁾ –2000
2000
V
1. Compliant with JEDEC Std. J-STD-020C (for small body, Sn-Pb or Pb assembly), the Numonyx
ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous
Substances (RoHS) 2002/95/EU.
2. Avoid applying VPP_H to the W/VPP pin during Bulk Erase.
3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
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