N25Q128A11B1241F Datasheet, PDF (114/185 Pages) Micron Technology – 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface

Instructions
N25Q128 - 1.8 V
Table 23. Instruction set: DIO-SPI protocol
Instruction
Description
One-byte
Instruction
Code (BIN)
One-byte
Instruction
Code
(HEX)
Address
bytes
Dummy
clock
cycle
Data
bytes
MIORDID Multiple I/O read identification
DCFR
Dual Command Fast Read
ROTP
WREN
WRDI
Read OTP
Write Enable
Write Disable
1010 1111 AFh
0
0000 1011 0Bh
3
0011 1011 3Bh
3
1011 1011 BBh
3
0100 1011 4Bh
3
0000 0110 06h
0
0000 0100 04h
0
0
1 to 3
8 ⁽¹⁾
1 to ∞
8⁽¹⁾
1 to ∞
8 ⁽¹⁾
1 to ∞
8 ⁽¹⁾
1 to 65
0
0
0
0
0000 0010 02h
3
DCPP
Dual Command Page Program
1010 0010 A2h
3
1101 0010 D2h
3
POTP
SSE ⁽²⁾
Program OTP
SubSector Erase
0100 0010 42h
3
0010 0000 20h
3
SE
Sector Erase
1101 1000 D8h
3
BE
Bulk Erase
1100 0111 C7h
0
PER
Program/Erase Resume
0111 1010
7Ah
0
PES
Program/Erase Suspend
0111 0101
75h
0
RDSR
Read Status Register
0000 0101 05h
0
WRSR
Write Status Register
0000 0001 01h
0
RDLR
Read Lock Register
1110 1000 E8h
3
WRLR
Write to Lock Register
1110 0101 E5h
3
RFSR
Read Flag Status Register
0111 0000 70h
0
CLFSR Clear Flag Status Register
0101 0000 50h
0
RDNVCR Read NV Configuration Register
1011 0101 B5h
0
WRNVCR Write NV Configuration Register
1011 0001 B1h
0
RDVCR Read Volatile Configuration Register 1000 0101 85h
0
0
1 to 256
0
1 to 256
0
1 to 256
0
1 to 65
0
0
0
0
0
0
0
0
0
0
0
1 to ∞
0
1
0
1 to ∞
0
1
0
1 to ∞
0
0
0
2
0
2
0
1 to ∞
WRVCR Write Volatile Configuration Register 1000 0001 81h
0
0
1
RDVECR
Read Volatile Enhanced Configuration
Register
0110 0101
65h
0
0
1 to ∞
WRVECR
Write Volatile Enhanced Configuration
Register
0110 0001
61h
0
0
1
DP
Deep Power-down
1011 1001 B9h
0
0
0
RDP
Release from Deep Power-down
1010 1011 ABh
0
0
0
114/185