H27U4G8F2D Datasheet, PDF (61/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
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H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
8.2 System Bad Block Replacement
Over the lifetime of the device additional Bad Blocks may develop. In this case each bad block has to be replaced by
copying the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will
return "fail" after Read Status Register.
The failure of a page program operation does not affect the data in other pages in the same block, thus the block can be
replaced by re-programming the current data and copying the rest of the replaced block to an available valid block.
Refer to Table 30 and Figure 47 for the recommended procedure to follow if an error occurs during an operation.
Operation
Erase
Program
Read
Recommended Procedure
Block Replacement
Block Replacement
ECC
Table 30: Block Failure
(2)
Data
Data
n ^thpage
Failure ⁽¹⁾
(3)
FFh
n ^th page
FFh
Buffer memory of the controller
Figure 47 : Bad Block Replacement
NOTE:
1. An error occurs on N^th page of the Block A during program or erase operation.
2. Data in Block A is copied to same location in Block B which is valid block.
3. N^th page of block A which is in controller buffer memory is copied into N^th page of Block B
4. Bad block table should be updated to prevent from erasing or programming Block A
Rev 1.4 / OCT. 2010
61
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B34416/177.179.157.84/2010-10-08 10:09