H27U4G8F2D Datasheet, PDF (31/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
WE
IO[7:0]
VALID
WP
> 100nsec
SEQUENCE
ABORTED
Figure 5: WP# low timing requirements during program/erase command sequence
5. Device Parameters
Parameter
Symbol
Min
Typ
Valid Block Numbe, 4Gb
N_VB
4016
-
Valid Block Numbe, 8Gb
N_VB
8032(*)
-
Valid Block Numbe, 16Gb
N_VB
16064(*)
-
Max
4096
8192
16284
Unit
Blocks
Blocks
Blocks
Table 22: Valid Blocks Number
(*) Each 4Gb has maximum 80 bad blocks
NOTE: The 1st block is quranteed to be a valid blick at the time of shipment.
Symbol
T_A
T_BIAS
T_STG
V_IO⁽²⁾
V_CC
Parameter
Ambient Operating Temperature (Temperature Range Option 1)
Ambient Operating Temperature (Temperature Range Option 6)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Value
3.0
0 to 70
-40 to 85
-50 to 125
-60 to 150
-0.6 to 4.6
-0.6 to 4.6
Unit
°C
°C
°C
°C
V
V
Table 23: Absolute maximum ratings
NOTES:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum
Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at
these or any other conditions above those indicated in the Operating sections of this specification is not implied. Expo
sure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMi
croelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Rev 1.4 / OCT. 2010
31
*ba53f20d-240c*
B34416/177.179.157.84/2010-10-08 10:08