H27U4G8F2D Datasheet, PDF (37/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
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H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
Serial Access Cycle after Read (EDO Type, CLE=L, WE=H, ALE=L)
tCR
CE
tRC
tRP
tREH
RE
tREA
tREA
tRLOH
IOx
tRR
Dout
tCHZ
tCOH
tRHZ
tRHOH
Dout
R/B
NOTES: Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to valid when frequency is lower than 33MHz.
Figure 9: Sequential Out Cycle after Read
Status Read Cycle & EDC Status Read Cycle
CLE
CE
WE
RE
IOx
tCLS
tCS
tCLH
tCLR
tCH
tWP
tWHR
tCEA
tCHZ
tCOH
tDH
tDS
70h or 7Bh
tIR
tREA
tRHZ
tRHOH
Status Output
Figure 10: Status / EDC Read Cycle
Rev 1.4 / OCT. 2010
37
*ba53f20d-240c*
B34416/177.179.157.84/2010-10-08 10:08