H27U4G8F2D Datasheet, PDF (43/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
Cycle Type
DQx
CMD ADDR ADDR ADDR ADDR ADDR
DIN DIN DIN DIN
tADL
80h C1A C2A R1A R2A R3A
D0A D1A ^...
DnA
SR[6]
CMD
11h
tADL
tIPBSY
A
Cycle Type
DQx
CMD ADDR ADDR ADDR ADDR ADDR
DIN DIN DIN
tADL
80h C1B C2B R1B R2B R3B
D0B D1BA ^...
DIN
DnB
SR[6]
CMD
10h
tADL
tPROG
Figure 21 : Multiple plane page program (ONFI 1.0 protocol)
NOTES :
C1_A-C2_A Column address for page A. C1_A is the least significant byte.
R1_A-R3_A Row address for page A. R1_A is the least significant byte.
D0_A-Dn_A Data to program for page A.
C1_B-C2_B Column address for page B. C1_B is the least significant byte.
R1_B-R3_B Row address for page B. R1_B is the least significant byte.
D0_B-Dn_B Data to program for page B.
Same restrictions on address of pages A and B, and allowed commands as Figure 20 apply
Rev 1.4 / OCT. 2010
*ba53f20d-240c*
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B34416/177.179.157.84/2010-10-08 10:08