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| H27U4G8F2D Datasheet, PDF (29/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash | |||
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APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
Program cache timing mode support
6-1
5Reserved (0)
5
1 = supports timing mode 5
131-132
O
4
1 = supports timing mode 4
3
1 = supports timing mode 3
2
1 = supports timing mode 2
1
1 = supports timing mode 1
0
1 = supports timing mode 0,
H27U4G8F2DKA-BM:1Fh, 00h
H27S4G8F2DKA-BM:03h, 00h
H27S4G6F2DKA-BM:03h, 00h
H27U4G8F2DTR-BC:1Fh, 00h
H27U4G8F2DTR-BI:1Fh, 00h
H27U8G8G5DTR-BC:1Fh, 00h
H27U8G8G5DTR-BI:1Fh, 00h
133-134
M
tPROG Maximum page program time (ã²)
BCh, 02h
135-136
M
tBERS Maximum block erase time (ã²)
0Ah, 00h
137-138
M
tR Maximum page read time (ã²)
19h, 00h
139-140
M
tccs Minimum Change Column setup time (ns)
64h, 00h
141-163
Reserved (0)
00h
Vendor block
164-165
M
Vendor specific Revision number
00h
166-253
Vendor specific
00h
254-255
M
Integrita CRC
H27U4G8F2DKA-BM:48h, F6h
H27S4G8F2DKA-BM:9Bh, CEh
H27S4G6F2DKA-BM:54h, 61h
H27U4G8F2DTR-BC:1Fh, EDh
H27U4G8F2DTR-BI:5Bh, 14h
H27U8G8G5DTR-BC:FCh, C1h
H27U8G8G5DTR-BI:B8h, 38h
Redundant Parameter Pages
256-511
M
Value of bytes 0-255
Repeat Value of bytes 0-255
512-767
M
Value of bytes 0-255
Repeat Value of bytes 0-255
768+
O
Additional redundant parameter pages
FFh
Table 21: Parameter Page Description
NOTE: âOâ Stands for Optional, âMâ for Mandatory
Rev 1.4 / OCT. 2010
*ba53f20d-240c*
29
B34416/177.179.157.84/2010-10-08 10:08
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