H27U4G8F2D Datasheet, PDF (34/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
Parameter
Symbol
CLE Setup time
CLE Hold time
CE# Setup time
CE# Hold time
WE# Pulse width
ALE Setup time
ALE Hold time
Data Setup time
Data Hold time
Write Cycle time
WE# High Hold time
Address to Data Loading time
Data Transfer from Cell to Register
ALE to RE# Delay
CLE to RE# Delay
Ready to RE# Low
RE# Pulse Width
WE# High to Busy
Read Cycle Time
RE# Access Time
CE# Low to RE# Low
RE# High to Output Hi-Z
CE# High to Output Hi-Z
CE# High to ALE or CLE Don't care
RE# High to Output Hold
RE# Low to Output Hold
CE# High to Output Hold
RE# High Hold Time
Output Hi-Z to RE# Low
RE# High to WE# Low
WE# High to RE# Low
Device Resetting Time(Read/Program/Erase)
Write protection time
t_CLS
t_CLH
t_CS
t_CH
t_WP
t_ALS
t_ALH
t_DS
t_DH
t_WC
t_WH
t_ADL
t_R
t_AR
t_CLR
t_RR
t_RP
t_WB
t_RC
t_REA
t_CR
t_RHZ
t_CHZ
t_CSD
t_RHOH
t_RLOH
t_COH
t_REH
t_IR
t_RHW
t_WHR
t_RST
t_WW
1.8 Volt
Min
Max
25
10
35
10
25
25
10
20
10
45
15
100
25
10
10
20
25
100
45
30
10
100
30
10
15
-
15
15
0
100
60
-
5/10/500⁽²⁾
100
3.0 Volt
Min
Max
12
5
20
5
12
12
5
12
5
25
10
70
25
10
10
20
12
100
25
20
10
100
30
10
15
5
15
10
0
100
60
5/10/500⁽²⁾
100
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Table 28: AC Timing Characteristics
NOTES: 1. The time to Ready depends on the value of the pull-up resistor tied to RB# pin
2. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
Rev 1.4 / OCT. 2010
34
*ba53f20d-240c*
B34416/177.179.157.84/2010-10-08 10:08