H27U4G8F2D Datasheet, PDF (33/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
Item
Input / Output Capacitance (1)
Input Capacitance (1)
Symbol Test Condition
Min
C_I/O
V_IL= 0V
-
C_IN
V_IN= 0V
-
Max
10
10
Unit
pF
pF
Table 26: Pin Capacitance (TA = 25C, f=1.0MHz)
NOTE: For the stacked devices version the Input Capacitance is 10pF x (number of stacked chips) and the I/O ca
pacitance is 10pF x (number of stacked chips)
Parameter
Symbol
Min
Program Time / Multi-plane program Time (3.0V)
-
Program Time/ Multi-plane program Time (1.8V)
t_PROG
-
Dummy Busy Time for Two Plane Program
t_DBSY
-
Cache program short busy time
t_CBSYW
-
Number of partial Program
Cycles in the same page
Main + Spare Array NOP
-
Block Erase Time / Multi-plane Erase Time (3.0V)
t_BERS
-
Block Erase Time/ Multi-plane Block Erase Time (1.8V) t_BERS
-
Read Cache busy time
tCBSYR
-
Multi-plane erase short busy time (ONFI protocol only) t_IEBSY
-
Typ
Max
Unit
200
700
us
250
700
us
0.5
1
us
5
t_PROG
us
-
4
Cycle
3.5
10
ms
3.5
10
ms
3
tR
us
0.5
1
us
Table 27: Program / Erase Characteristics
NOTE: Typical program time is defined as the time within which more than 50% of the whole pages are programmed
(Vcc=3.3V and 1.8V, 25*C )
Rev 1.4 / OCT. 2010
*ba53f20d-240c*
33
B34416/177.179.157.84/2010-10-08 10:08