H27U4G8F2D Datasheet, PDF (52/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
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H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
Vcc
GND
Rp _ibusy
R/B
open drain output
CL
Ready VCC
1.8V device - VOL : 0.1V. VOH : VCC-0.1V
2.7V device - VOL : 0.4V. VOH : VCCQ-0.4V
3.3V device - VOL : 0.4V. VOH : 2.4V
VOL : 0.4V, VOH : 2.4V
VOH
VOL
Busy
tf
tr
Device
Rp vs tr, tf & Rp vs ibusy
@ Vcc = 1.8V, Ta = 25°C, CL=30pF
ibusy [A]
300n
3m 300n
200n
100n
ibusy
1.70
0.85
30 ^{tr 60}
90
0.57
tr,tf [c]
1.70 _tf 1.70
1.70
1K
2K
3K
Rp(ohm)
120
0.43
1.70
4K
2m ²⁰⁰ⁿ
1m 100n
tr,tf [c]
@ Vcc = 2.7V, Ta = 25°C, CL=30pF
ibusy [A]
2.3
ibusy
1.1
3m 300n
2m ²⁰⁰ⁿ
90
30 tr ⁶⁰
0.75
2.3 _tf 2.3
2.3
1K
2K
3K
Rp(ohm)
120
1m 100n
0.55
2.3
4K
tr,tf [c]
@ Vcc = 3.3V, Ta = 25°C, CL=50pF
2.4
200
ibusy
1.2
150
100
0.8
tr
50
0.6
1.8 _tf 1.8
1.8
1.8
1K
2K
3K
4K
Rp(ohm)
ibusy [A]
3m
2m
1m
Rp value guidence
Rp (min. 1.8V part) = ^{Vcc (Max.) - VOL (Max.)} =
,OL + ™,L
Rp (min. 2.7V part) = ^{Vcc (Max.) - VOL (Max.)} ₌
,OL + ™,L
Rp (min. 3.3V part) = ^{Vcc (Max.) - VOL (Max.)} ₌
,OL + ™,L
1.85V
P$™,L
2.5V
P$™,L
3.2V
P$™,L
where IL is the sum of the input currnts of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
1.8V version
3.0V version
Figure 34: Ready/Busy Pin electrical application
Rev 1.4 / OCT. 2010
*ba53f20d-240c*
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B34416/177.179.157.84/2010-10-08 10:08