H27U4G8F2D Datasheet, PDF (40/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
Page Program Operation
CLE
CE
tWC
WE
ALE
tWC
tWC
tADL
tWB
tPROG
tWHR
RE
I/Ox
80h
Serial Data
Input Command
Col. Col.
Add1 Add2
Column Address
Row. Row. Row.
Add1 Add2 Add3
Row Address
R/B
Din
Din
N
M
1 up to m Byte
Serial Input
10h
Program
Command
NOTES: tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Figure 15: Page Program Operation
70h
Read Status
Command
I/O0
I/O0=0 Successful Program
I/O0=1 Error in Program
Page Program Operation with Random Data Input
CLE
CE
tWC
WE
ALE
tWC
tWC
tADL
tADL
tWB tPROG
RE
IOx
80h
Col. Col. Row Row Row
Din
Add1 Add2 Add1 Add2 Add3
N
Serial Data
Column Address
Input Command
Column Address
R/B
Din
M
85h
Col. Col.
Add1 Add2
Random Data Column Address
Input Command
Din
Din
J
K
Serial Input
10h
Program
Command
NOTES : 1. tADL is the time from the WE risinig edge of final address cycle to the WE rising edge of first data cycle.
2. For EDC operation. only one time random data input is possible at same address.
Figure 16: Random Data In
tWHR
70h IO0
Read Status
Command
Rev 1.4 / OCT. 2010
40
*ba53f20d-240c*
B34416/177.179.157.84/2010-10-08 10:08