H27U4G8F2D Datasheet, PDF (3/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
FEATURES SUMMARY
DENSITY
- 4Gbit: 4096blocks
Nand FLASH INTERFACE
- NAND Interface
- ADDRESS / DATA Multiplexing
SUPPLY VOLTAGE
- Vcc = 3.0/1.8V Volt core supply voltage for Program,
Erase and Read operations.
MEMORY CELL ARRAY
- X8: (2K + 64) bytes x 64 pages x 4096 blocks
- X16: (1k+32) words x 64 pages x 2048 blocks
PAGE SIZE
- X8: (2048 + 64 spare) bytes
- X16:(1024 + 32spare) Words
Block SIZE
- X8: (128K + 4K spare) bytes
- X16:(64K + 2K spare) Words
PAGE READ / PROGRAM
- Random access: 25us (Max)
- Sequentiall access: 25ns / 45ns (3.0V/1.8V, min.)
- Program time(3.0V/1.8V): 200us / 250us (Typ)
- Multi-page program time (2 pages):
200us / 250us (3.0V/1.8V, Typ.)
BLOCK ERASE / MULTIPLE BLOCK ERASE
- Block erase time: 3.5 ms (Typ)
- Multi-block erase time (2 blocks):
3.5ms/ 3.5ms (3.0V/1.8V, Typ.)
SEQURITY
- OTP area
- Sreial number (unique ID)
- Non-volatile protection option for OTP and Block0(Opt.)
- Hardware program/erase disabled during
power transition
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H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
ADDTIONAL FEATURE
- Multiplane Architecture
: Array is split into two independent planes.
Parallel operations on both planes are available, having
program and erase time.
- Single and multiplane copy back program with automatic
EDC (error detection code)
- Single and multiplane page re-program
- Single and multiplane cache program
- Cache read
- Multiplane block erase
Reliability
- 100,000 Program / Erase cycles (with 1bit /528Byte ECC)
- 10 Year Data retention
ONFI 1.0 COMPLIANT COMMAND SET
ELECTRONICAL SIGNATURE
- Munufacture ID: ADh
- Device ID
PACKAGE
- Lead/Halogen Free
- TSOP48 12 x 20 mm
Rev 1.4 / OCT. 2010
*ba53f20d-240c*
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B34416/177.179.157.84/2010-10-08 10:08