H27U4G8F2D Datasheet, PDF (36/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
Input Data Latch Cycle
tCLH
CLE
tCH
CE
ALE
tWC
tALS
tWP
tWP
tWP
WE
tWH
tWH
tDS ^tDH
tDS ^tDH
tDS ^tDH
I/Ox
DIN 0
DIN 1
DIN final
Figure 7: Input Data Latch Cycle
* Serial Access Cycle after Read (CLE=L, WE=H, ALE=L)
tRC
CE
tREH
tCHZ
tREA
tREA
tREA
tCOH
RE
I/Ox
Dout
tRR
tRHZ
Dout
tRHZ
tRHOH
Dout
R/B
NOTES: Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
Figure 8: Sequential Out Cycle after Read
Rev 1.4 / OCT. 2010
36
*ba53f20d-240c*
B34416/177.179.157.84/2010-10-08 10:08