H27U4G8F2D Datasheet, PDF (25/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
3^rd ID Data
Internal Chip Number
Cell Type
Number of
Simultaneously
Programmed Pages
Interleave Program
Between multiple chips
Cache Program
Description
1
2
4
8
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
1
2
4
8
Not Support
Support
Not Support
Support
I/O7
0
1
I/O6
0
1
I/O5 I/O4
00
01
10
11
I/O3 I/O2
00
01
10
11
I/O1 I/O0
00
01
10
11
Table 16: Legacy Read ID 3^rd byte description
4^th ID Data
Page Size
(w/o redundant area)
Block Size
(w/o redundant area)
Redundant Area Size
(byte/512byte)
Organization
Serial Access Minimum
Description
1KB
2KB
4KB
8KB
64KB
128KB
256KB
512KB
8
16
X8
X16
50ns/30ns
25ns
Reserved
Reserved
I/O7
0
1
0
1
I/O6 I/O5 I/O4 I/O3
00
01
10
11
0
1
0
0
1
1
I/O2
I/O1 I/O0
00
01
10
11
0
1
Table 17: Legacy Read ID 4^th byte description
Rev 1.4 / OCT. 2010
*ba53f20d-240c*
25
B34416/177.179.157.84/2010-10-08 10:08