H27U4G8F2D Datasheet, PDF (24/62 Pages) Hynix Semiconductor – 4 Gbit (512M x 8 bit) NAND Flash

APCPCWM_4828539:WP_0000001WP_0000001
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H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
3.19 Read ID.
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an
address input of 00h.
The 5-byte Read ID configuration are supported: The device operating mode (5-byte) is selected through cam setting.
3.19.1 Legacy Read ID
Five read cycles sequentially output the manufacturer code (20h), and the device code and 3^rd, 4^th, and 5^th cycle ID,
respectively. The command register remains in Read ID mode until further commands are issued to it. Figure 27 shows
the operation sequence, while Table 14 to Table 18 explain the byte meaning. Complete read id code table is as
follows.
DENSITY
ORG
VCC
1^st
2^nd
3^rd
4^{th (1)}
5^th
X8
3.0V
ADh
DCh
90h
95h
54h
X16
3.0V
ADh
CCh
90h
D5h
54h
4 Gbit
X8
1.8V
ADh
ACh
90h
15h
54h
X16
1.8V
ADh
BCh
90h
55h
54h
X8
3.0V
ADh
D3h
D1h
95h
58h
8 Gbit
X16
3.0V
ADh
C3h
D1h
D5h
58h
DDP
X8
1.8V
ADh
A3h
D1h
15h
58h
X16
1.8V
ADh
B3h
D1h
55h
58h
X8
3.0V
ADh
D5h
D2h
95h
5Ch
16 Gbit
X16
3.0V
ADh
C5h
D2h
D5h
5Ch
QDP
X8
1.8V
ADh
A5h
D2h
15h
5Ch
X16
1.8V
ADh
B5h
D2h
55h
5Ch
Table 14: Legacy " Read ID for supported configurations
NOTE: for 1.8V version, IO<7,3>=00 would mean "50nsec", while device serial cycle time is 45nsec
DEVICE IDENTIFIER BYTE
1^st
2^nd
3^rd
4^th
5^th
DESCRIPTION
Manufacturer Code
Device Identifier
Internal chip number, cell type, etc.
Page Size, Block Size, Spare Size, Organization
Multiplane information
Table 15: "Legacy" Read ID bytes meaning
Rev 1.4 / OCT. 2010
*ba53f20d-240c*
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B34416/177.179.157.84/2010-10-08 10:08