MC9S08RC8 Datasheet, PDF (47/234 Pages) Freescale Semiconductor, Inc – Microcontrollers

Memory
• Writing to a FLASH address before the internal FLASH clock frequency has been set by writing
to the FCDIV register
• Writing to a FLASH address while FCBEF is not set (A new command cannot be started until the
command buffer is empty.)
• Writing a second time to a FLASH address before launching the previous command (There is only
one write to FLASH for every command.)
• Writing a second time to FCMD before launching the previous command (There is only one write
to FCMD for every command.)
• Writing to any FLASH control register other than FCMD after writing to a FLASH address
• Writing any command code other than the five allowed codes ($05, $20, $25, $40, or $41) to
FCMD
• Accessing (read or write) any FLASH control register other than the write to FSTAT (to clear
FCBEF and launch the command) after writing the command to FCMD
• The MCU enters stop mode while a program or erase command is in progress (The command is
aborted.)
• Writing the byte program, burst program, or page erase command code ($20, $25, or $40) with a
background debug command while the MCU is secured (The background debug controller can
only do blank check and mass erase commands when the MCU is secure.)
• Writing 0 to FCBEF to cancel a partial command
4.4.6 FLASH Block Protection
Block protection prevents program or erase changes for FLASH memory locations in a designated address
range. Mass erase is disabled when any block of FLASH is protected. The MC9S08RC/RD/RE/RG allows
a block of memory at the end of FLASH, and/or the entire FLASH memory to be block protected. A
disable control bit and a 3-bit control field, for each of the blocks, allows the user to independently set the
size of these blocks. A separate control bit allows block protection of the entire FLASH memory array. All
seven of these control bits are located in the FPROT register (see Section 4.6.4, “FLASH Protection
Register (FPROT and NVPROT)“).
At reset, the high-page register (FPROT) is loaded with the contents of the NVPROT location that is in the
nonvolatile register block of the FLASH memory. The value in FPROT cannot be changed directly from
application software so a runaway program cannot alter the block protection settings. If the last 512 bytes
of FLASH (which includes the NVPROT register) is protected, the application program cannot alter the
block protection settings (intentionally or unintentionally). The FPROT control bits can be written by
background debug commands to allow a way to erase a protected FLASH memory.
One use for block protection is to block protect an area of FLASH memory for a bootloader program. This
bootloader program then can be used to erase the rest of the FLASH memory and reprogram it. Because
the bootloader is protected, it remains intact even if MCU power is lost during an erase and reprogram
operation.
MC9S08RC/RD/RE/RG Data Sheet, Rev. 1.11
Freescale Semiconductor
47