MC9S08RC8 Datasheet, PDF (218/234 Pages) Freescale Semiconductor, Inc – Microcontrollers

Electrical Characteristics
A.10 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory chapter.
Table A-12. FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
V_prog/erase
2.05
3.6
V
Supply voltage for read operation
0 < f_Bus < 8 MHz
Internal FCLK frequency⁽¹⁾
V_Read
1.8
f_FCLK
150
V
3.6
200
kHz
Internal FCLK period (1/FCLK)
Byte program time (random location)⁽²⁾
Byte program time (burst mode)⁽²⁾
Page erase time⁽²⁾
Mass erase time⁽²⁾
Program/erase endurance⁽³⁾
T_L to T_H = –40°C to + 85°C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
5
9
4
4000
20,000
10,000
100,000
6.67
—
—
µs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
Data retention⁽⁴⁾
t_{D_ret}
15
100
—
years
1. The frequency of this clock is controlled by a software setting.
2. These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
3. Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
4. Typical data retention values are based on intrinsic capability of the technology measured at high temperature
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
MC9S08RC/RD/RE/RG Data Sheet, Rev. 1.11
218
Freescale Semiconductor