MC908JL3ECPE Datasheet, PDF (29/180 Pages) Freescale Semiconductor, Inc – Microcontrollers

Flash Control Register
2.7 Flash Control Register
The Flash Control Register controls Flash program and erase operations.
Address: $FE08
Bit 7
6
5
4
3
2
1
Bit 0
Read: 0
0
0
0
HVEN MASS ERASE PGM
Write:
Reset: 0
0
0
0
0
0
0
0
= Unimplemented
Figure 2-4. Flash Control Register (FLCR)
HVEN — High Voltage Enable Bit
This read/write bit enables high voltage from the charge pump to the memory for either program or
erase operation. It can only be set if either PGM=1 or ERASE=1 and the proper sequence for program
or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
This read/write bit configures the memory for mass erase operation or page erase operation when the
ERASE bit is set.
1 = Mass erase operation selected
0 = Page erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. This bit and the PGM bit should not be
set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation not selected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. This bit and the ERASE bit should
not be set to 1 at the same time.
1 = Program operation selected
0 = Program operation not selected
MC68HC908JL3E Family Data Sheet, Rev. 4
Freescale Semiconductor
29