MC9S12XF512_1 Datasheet, PDF (231/1306 Pages) Freescale Semiconductor, Inc – S12X Microcontrollers

Chapter 8 256 KByte Flash Module (S12XFTM256K2XFV1)
The Full Partition D-Flash command (see Section 8.4.2.14) is used to program the EEE nonvolatile
information register fields where address 0x12_0000 defines the D-Flash partition for user access and
address 0x12_0004 defines the buffer RAM partition for EEE operations.
Table 8-7. EEE Nonvolatile Information Register Fields
Global Address
(EEEIFRON)
Size
(Bytes)
Description
0x12_0000 – 0x12_0001
2
D-Flash User Partition (DFPART)
Refer to Section 8.4.2.14, “Full Partition D-Flash Command”
0x12_0002 – 0x12_0003
2
D-Flash User Partition (duplicate⁽¹⁾)
0x12_0004 – 0x12_0005
2
Buffer RAM EEE Partition (ERPART)
Refer to Section 8.4.2.14, “Full Partition D-Flash Command”
0x12_0006 – 0x12_0007
2
Buffer RAM EEE Partition (duplicate¹)
0x12_0008 – 0x12_007F 120 Reserved
1. Duplicate value used if primary value generates a double bit fault when read during the reset sequence.
8.3.2 Register Descriptions
The Flash module contains a set of 20 control and status registers located between Flash module base +
0x0000 and 0x0013. A summary of the Flash module registers is given in Figure 8-4 with detailed
descriptions in the following subsections.
CAUTION
Writes to any Flash register must be avoided while a Flash command is
active (CCIF=0) to prevent corruption of Flash register contents and
Memory Controller behavior.
Address
& Name
0x0000
FCLKDIV
7
R FDIVLD
W
6
FDIV6
5
FDIV5
4
FDIV4
3
FDIV3
2
FDIV2
1
FDIV1
0
FDIV0
0x0001
FSEC
R KEYEN1
W
KEYEN0
RNV5
RNV4
RNV3
RNV2
SEC1
SEC0
0x0002
R
0
FCCOBIX _W
0
0
0
0
CCOBIX2 CCOBIX1 CCOBIX0
0x0003
R
0
FECCRIX _W
0
0
0
0
ECCRIX2 ECCRIX1 ECCRIX0
0x0004
FCNFG
R
CCIE
W
0
0
0
IGNSF
0
FDFD
FSFD
Figure 8-4. FTM256K2XF Register Summary
MC9S12XF - Family Reference Manual, Rev.1.19
Freescale Semiconductor
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