IBIS4-6600 Datasheet, PDF (6/63 Pages) Cypress Semiconductor – High resolution 6.6 M Pixel Rolling shutter CMOS Image sensor

IBIS4-6600
Datasheet
2 Specifications
2.1 General specifications
Table 1: General specifications
Parameter
Pixel
architecture
Pixel size
Resolution
Pixel rate
Shutter type
Full frame
rate
Specification
3T-pixel
3.5 µm x 3.5 µm
2210 x3002
40 MHz
Electronic rolling
shutter
5 frames/second
Remarks
The resolution and pixel size results in a
7,74 mm x 10,51 mm optical active area.
Using a 40 MHz system clock and 1 or 2
parallel outputs.
Increases with ROI read out and/or sub
sampling.
2.2 Electro-optical specifications
2.2.1 Overview
Table 2: Electro-optical specifications
Parameter
FPN (local)
PRNU (local)
Conversion gain
Output signal
amplitude
Saturation charge
Sensitivity
Specification
<0.35 %
<1.5%
37 uV/electron
0.8V
21.500 e-
283 V.m2/W.s
1.57 V/lux.s
Peak QE * FF
Peak SR * FF
22.5 %
0.12 A/W
Fill factor
Dark current (@
21 °C)
Temporal noise
Dynamic range
50%
6.29 mV/s
170 e-/s
20 RMS e-
1100:1
940:1
Remarks
RMS % of saturation signal.
RMS of signal level.
@ output (measured).
At nominal conditions.
Average white light.
Visible band only (180 lx = 1 W/m2).
Average QE*FF = 20% (visible range).
Average SR*FF = 0.1 A/W (visible range).
See spectral response curve.
Light sensitive part of pixel.
Typical value of average dark current of the
whole pixel array.
Measured at digital output (in the dark).
Full: 61 dB.
Linear: 59.5 dB.
Cypress Semiconductor Corporation 3901 North First Street
San Jose, CA 95134
408-943-2600
Contact: [e-mail] Document #: 38-05708 Rev.**(Revision 1.3 )
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