IBIS4-6600 Datasheet, PDF (48/63 Pages) Cypress Semiconductor – High resolution 6.6 M Pixel Rolling shutter CMOS Image sensor

IBIS4-6600
Datasheet
6.2 Bonding pads
The pad size is 100 µm by 100 µm.
Every pin has double bonding pads, one for bonding, the other for wafer probing:
- Horizontal pads on the top and bottom:
o Horizontal pitch is 537.5 µm.
o Left pad for wafer probing on the bottom, right pad on the top.
o Right pad for bonding on the bottom, left pad on the top.
- Vertical pads on the left and the right:
o Vertical pitch is 715 µm.
o Upper pad is for wafer probing on the right, lower pad on the left.
o Lower pad is for bonding on the right, upper pad on the left.
The origin of all coordinates in the tables is located in the centre of the pad at pin
location 1. The distance between the centre of the probe pad and the centre of the
bonding pad of the same pin equals 120 µm.
6.2.1 Probe pad positions
Table 18 shows the position of the pads for wafer probing.
Table 18: Probe pad positions
Probe pad
Pin
X (µm)
Y (µm)
Pin
X (µm)
1
0
0
35
9010.1
2
0
-715
36
9010.1
3
0
-1430
37
9010.1
4
0
-2145
38
9010.1
5
0
-2860
39
9010.1
6
0
-3575
40
9010.1
7
0
-4290
41
9010.1
8
0
-5005
42
9010.1
9
0
-5720
43
9010.1
10
145.05
-5985.05
44
8865.05
11
682.55
-5985.05
45
8327.55
12
1220.05
-5985.05
46
7790.05
13
1757.55
-5985.05
47
7252.55
14
2295.05
-5985.05
48
6715.05
15
2832.55
-5985.05
49
6177.55
16
3370.05
-5985.05
50
5640.05
17
3907.55
-5985.05
51
5102.55
18
4445.05
-5985.05
52
4565.05
19
4982.55
-5985.05
53
4027.55
20
5520.05
-5985.05
54
3490.05
Y (µm)
-120
595
1310
2025
2740
3455
4170
4885
5600
5865.05
5865.05
5865.05
5865.05
5865.05
5865.05
5865.05
5865.05
5865.05
5865.05
5865.05
Cypress Semiconductor Corporation 3901 North First Street
San Jose, CA 95134
408-943-2600
Contact: [e-mail] Document #: 38-05708 Rev.**(Revision 1.3 )
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