S6E2C2 Datasheet, PDF (194/207 Pages) Cypress Semiconductor – 32-bit ARM® Cortex®-M4F FM4 Microcontroller

S6E2C2 Series
12.9 MainFlash Memory Write/Erase Characteristics
Parameter
Sector erase time
Large Sector
Small Sector
Value
Min
Typ
-
0.7
-
0.3
(VCC = 2.7V to 5.5V)
Max ^Unit
Remarks
3.7
s
Includes write time prior to internal
erase
1.1
s
Half word (16-bit)
write time
Write cycles < 100 times
Write cycles > 100 times
-
12
100
200
μs
Not including system-level overhead
time
Chip erase time*
-
13.6
68
s
Includes write time prior to internal
erase
*: It indicates the chip erase time of 1MB MainFlash memory
For devices with 1.5 MB or 2 MB of MainFlash memory, two erase cycles are required.
See 3.2.2 Command Operating Explanations and 3.3.3 Flash Erase Operation in this product's Flash Programming Manual
for the detail.
Write Cycles and Data Retention Time
Erase/Write Cycles (Cycle)
Data Retention Time (Year)
1,000
20*
10,000
10*
100,000
5*
*: This value comes from the technology qualification (using Arrhenius equation to translate high temperature
acceleration test result into average temperature value at + 85°C).
12.10 Dual Flash Memory Write/Erase Characteristics
It is the same write/erase characteristics as the MainFlash memory.
See 3.6 Dual flash mode in this product's Flash Programming Manual for the detail of dual flash mode.
Document Number: 002-05030 Rev.*A
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