W25M02GVZEIG-TR Datasheet, PDF (58/68 Pages) Winbond – 3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS

W25M02GV
9.4 DC Electrical Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Input Leakage
I/O Leakage
Standby Current
Read Current
Current Page Program
Current Block Erase
Current
Concurrent Operations
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
SYMBOL CONDITIONS
CIN(1)
Cout⁽¹⁾
ILI
ILO
ICC1
ICC2
ICC3
ICC4
VIN = 0V⁽¹⁾
VOUT = 0V⁽¹⁾
/CS = VCC,
VIN = GND or VCC
C = 0.1 VCC / 0.9 VCC
DO = Open
/CS = VCC
/CS = VCC
ICC5
/CS = VCC
VIL
VIH
VOL
VOH
IOL = 2.1mA
IOH = –400 µA
MIN
VCC x 0.7
2.4
SPEC
TYP
20
MAX
6
8
±4
±4
100
25
35
25
35
25
35
70
VCC x 0.3
0.4
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.
UNIT
pF
pF
µA
µA
µA
mA
mA
mA
mA
V
V
V
V
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